Effect of an electric field on size‐quantized photoemission from nanometer films of semiconductors
Identifieur interne : 001F79 ( Main/Exploration ); précédent : 001F78; suivant : 001F80Effect of an electric field on size‐quantized photoemission from nanometer films of semiconductors
Auteurs : N. R. Das ; S. Ghosh ; A. N. ChakravartiSource :
- physica status solidi (b) [ 0370-1972 ] ; 1992-11-01.
English descriptors
- Teeft :
- Chakravarti, Degenerate, Degenerate semiconductors, Different film thicknesses, Eldl, Electric field, Electron affinity, Fermi energy, Film surface, Film thickness, Ghosh, Oscillatory nature, Pergamon press, Photocurrent, Photocurrent density, Photoemission, Photon, Photon absorption, Photon energies, Phys, Quantization, Quantized, Quantum wells, Semiclassical approach, Semiconductor, Subband, Subbands, Ultrathin, Ultrathin film, Ultrathin films, Volume density.
Abstract
An attempt is made to investigate the electric field‐aided photoemission from quantum wells in ultrathin films of degenerate wide‐gap semiconductors, taking n‐type GaAs as an example. It is found that the photoemission varies in a step‐like manner with photon energies close to the electron affinity and exhibits oscillatory character in its dependence on the film thickness, both in presence and absence of an electric field. For photon energies significantly lower than the electron affinity, a quantized nature of the emission is observed in certain ranges of film thicknesses. Besides, the rate of increase of the photoemission with electric field is seen to increase with increasing film thickness over the range of thicknesses of interest in ultrathin films.
Am Beispiel von n‐GaAs wird die feldgestützte Photoemission von Quantenwells in ultradünnen Schichten degenerierter Breitbandhalbleiter untersucht. Die Photoemission ändert sich stufenförmig, wenn die Photonenenergie nahe der Elektronenaffinität ist und zeigt Oszillationen in der Abhängigkeit von der Schichtdicke sowohl mit als auch ohne angelegtes elektrisches Feld. Für Photonenenergien merklich unterhalb der Elektronenaffinität ist die Emission in gewissen Dickenbereichen quantisiert. Die Wachstumsrate der Photoemission im elektrischen Feld nimmt mit der Schichtdicke im gesamten interessierenden Bereich ultradünner Schichten zu.
Url:
DOI: 10.1002/pssb.2221740105
Affiliations:
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R." last="Das">N. R. Das</name><affiliation><wicri:noCountry code="subField">Calcutta</wicri:noCountry></affiliation></author><author><name sortKey="Ghosh, S" sort="Ghosh, S" uniqKey="Ghosh S" first="S." last="Ghosh">S. Ghosh</name><affiliation><wicri:noCountry code="subField">Calcutta</wicri:noCountry></affiliation></author><author><name sortKey="Chakravarti, A N" sort="Chakravarti, A N" uniqKey="Chakravarti A" first="A. N." last="Chakravarti">A. N. Chakravarti</name><affiliation><wicri:noCountry code="subField">Calcutta</wicri:noCountry></affiliation></author></analytic><monogr></monogr><series><title level="j" type="main">physica status solidi (b)</title><title level="j" type="alt">PHYSICA STATUS SOLIDI B</title><idno type="ISSN">0370-1972</idno><idno type="eISSN">1521-3951</idno><imprint><biblScope unit="vol">174</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="45">45</biblScope><biblScope unit="page" to="52">52</biblScope><biblScope unit="page-count">8</biblScope><publisher>WILEY‐VCH Verlag</publisher><pubPlace>Berlin</pubPlace><date type="published" when="1992-11-01">1992-11-01</date></imprint><idno type="ISSN">0370-1972</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0370-1972</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="Teeft" xml:lang="en"><term>Chakravarti</term><term>Degenerate</term><term>Degenerate semiconductors</term><term>Different film thicknesses</term><term>Eldl</term><term>Electric field</term><term>Electron affinity</term><term>Fermi energy</term><term>Film surface</term><term>Film thickness</term><term>Ghosh</term><term>Oscillatory nature</term><term>Pergamon press</term><term>Photocurrent</term><term>Photocurrent density</term><term>Photoemission</term><term>Photon</term><term>Photon absorption</term><term>Photon energies</term><term>Phys</term><term>Quantization</term><term>Quantized</term><term>Quantum wells</term><term>Semiclassical approach</term><term>Semiconductor</term><term>Subband</term><term>Subbands</term><term>Ultrathin</term><term>Ultrathin film</term><term>Ultrathin films</term><term>Volume density</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">An attempt is made to investigate the electric field‐aided photoemission from quantum wells in ultrathin films of degenerate wide‐gap semiconductors, taking n‐type GaAs as an example. It is found that the photoemission varies in a step‐like manner with photon energies close to the electron affinity and exhibits oscillatory character in its dependence on the film thickness, both in presence and absence of an electric field. For photon energies significantly lower than the electron affinity, a quantized nature of the emission is observed in certain ranges of film thicknesses. Besides, the rate of increase of the photoemission with electric field is seen to increase with increasing film thickness over the range of thicknesses of interest in ultrathin films.</div><div type="abstract" xml:lang="de">Am Beispiel von n‐GaAs wird die feldgestützte Photoemission von Quantenwells in ultradünnen Schichten degenerierter Breitbandhalbleiter untersucht. Die Photoemission ändert sich stufenförmig, wenn die Photonenenergie nahe der Elektronenaffinität ist und zeigt Oszillationen in der Abhängigkeit von der Schichtdicke sowohl mit als auch ohne angelegtes elektrisches Feld. Für Photonenenergien merklich unterhalb der Elektronenaffinität ist die Emission in gewissen Dickenbereichen quantisiert. Die Wachstumsrate der Photoemission im elektrischen Feld nimmt mit der Schichtdicke im gesamten interessierenden Bereich ultradünner Schichten zu.</div></front></TEI><affiliations><list></list><tree><noCountry><name sortKey="Chakravarti, A N" sort="Chakravarti, A N" uniqKey="Chakravarti A" first="A. N." last="Chakravarti">A. N. Chakravarti</name><name sortKey="Das, N R" sort="Das, N R" uniqKey="Das N" first="N. R." last="Das">N. R. Das</name><name sortKey="Ghosh, S" sort="Ghosh, S" uniqKey="Ghosh S" first="S." last="Ghosh">S. Ghosh</name></noCountry></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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